052-6268 rev d 6-2008 apt25gt120br(g) typical performance curves maximum ratings all ratings: t c = 25c unless otherwise speci?ed. static electrical characteristics characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i c = 1.5ma) gate threshold voltage (v ce = v ge , i c = 1ma, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 25a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 25a, t j = 125c) collector cut-off current (v ce = 1200v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 1200v, v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) symbol v (br)ces v ge(th) v ce(on) i ces i ges units volts ana symbol v ces v ge i c1 i c2 i cm ssoa p d t j ,t stg t l apt25gt120br(g) 1200 30 5425 75 75a @ 1200v 347 -55 to 150 300 unit volts amps watts c parameter collector-emitter voltage gate-emitter voltage continuous collector current @ t c = 25c continuous collector current @ t c = 110c pulsed collector current 1 switching safe operating area @ t j = 150c total power dissipation operating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. apt website - http://www.a dv ancedpo we r. com caution: these devices are sensitive to electrostatic discharge. proper hand ling procedures should be followed. g c e min typ max 1200 4.5 5.5 6.5 2.7 3.2 3.7 3.9 100 tbd 120 1200v apt25gt120br APT25GT120BRG* *g denotes rohs compliant, pb free terminal finish. ? the thunderblot igbt ? is a new generation of high voltage power igbts. using non- punch through technology, the thunderblot igbt ? offers superior ruggedness and ultrafast switching speed. ?? low?forward?voltage?drop? ???high?freq.?switching?to?50khz ?? low?tail?current? ???ultra?low?leakage?current ?? rbsoa?and?scsoa?rated thunderbolt igbt ? to-247 g c e downloaded from: http:///
052-6268 rev d 6-2008 apt25gt120br(g) thermal and mechanical characteristics unit c/w gm min typ max .36 n/a 5.9 characteristic junction to case (igbt) junction to case (diode) package weight symbol r jc r jc w t dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc ssoa t d(on) t r t d(off) t f e on1 e on2 e off t d(on) t r t d(off) t f e on1 e on2 e off test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 600v i c = 25a t j = 150c, r g = 5 ?,? v ge = 15v, l = 100h,v ce = 1200v i nductive?switching?(25c) v cc = 800v v ge = 15v i c = 25a r g = 5 ? t j = +25c inductive?switching?(125c) v cc = 800v v ge = 15v i c = 25a r g = 5 ?? t j = +125c characteristicinput capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge switching safe operating area turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 4 turn-on switching energy (diode) 5 5 turn-off switching energy 6 min typ max 1650 250 110 10.0 170 20 100 75 14 27 150 36 930 1860 720 14 27 175 45 925 3265 965 unit pf v nc a ns j ns j 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4 e on1 is the clamped inductive turn-on energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. tested in inductive switching test circuit shown in ?gure 21, but with a silicon carbide diode. 5 e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switching loss. (see figures 21, 22.) 6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23.) apt?reserves?the?right?to?change,?without?notice,?the?speciications?and?information?contained?herein . downloaded from: http:///
052-6268 rev d 6-2008 apt25gt120br(g) typical performance curves v gs(th) , threshold voltage v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) (normalized) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) i c = 25a t j = 25c 250s pulse test<0.5 % duty cycle 8070 60 50 40 30 20 10 0 8070 60 50 40 30 20 10 06 5 4 3 2 1 0 1.101.05 1.00 0.95 0.90 0.85 0.80 0.75 0 2 4 6 8 0 5 10 15 20 0 2 4 6 8 10 12 14 0 20 40 60 80 100 120 140 160 180 200 6 8 10 12 14 16 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 100 8060 40 20 0 1614 12 10 86 4 2 0 6 5 4 3 2 1 0 8070 60 50 40 30 20 10 0 t j = 125c t j = 25c t j = 25c. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test <0.5 % duty cycle t j = 125c t j = 25c v ge = 15v v ce = 960v v ce = 600v v ce = 240v v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure?1,??output??characteristics(t j =?25c)? figure?2,??output??characteristics?(t j =?125c) v ge , gate-to-emitter voltage (v) gate charge (nc) figure?3,??transfer??characteristics? figure?4,?gate??charge v ge , gate-to-emitter voltage (v) t j ,?junction?temperature?(c) figure?5,??on??state?voltage?vs?gate-to-?emitter?voltage? figure?6,?on?state?voltage?vs?junction?temp erature t j ,?junction?temperature?(c)? t c ,?case?temperature?(c) figure?7,?threshold?voltage??vs.?junction?temperature? figure?8,?dc?collector?current?vs?case?tempera ture i c = 12.5a i c = 25a i c = 50a i c = 12.5a i c = 25a i c = 50a t j = -55c 13v 11v 10v 9v 12v 8v 7v 15v t j = -55c downloaded from: http:///
052-6268 rev d 6-2008 apt25gt120br(g) v ge =15v,t j =125c v ge =15v,t j =25c v ce = 800v r g = 5 ? l = 100h switching energy losses (j) e on2 , turn on energy loss (j) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses (j) e off , turn off energy loss (j) t f, fall time (ns) t d (off) , turn-off delay time (ns) i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure?9,?turn-on?delay?time?vs?collector?current? figure?10,?turn-off?delay?time?vs?collector?curren t i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure?11,??current?rise?time?vs?collector?current? figure?12,??current?fall?time?vs?collector?curren t i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure?13,?turn-on?energy?loss?vs?collector?current? figure??14,??turn?off?energy?loss?vs?collector?c urrent r g , gate resistance (ohms) t j ,?junction?temperature?(c) figure?15,?switching?energy?losses??vs.?gate?resistance? figure?16,?switching?energy?losses??vs?junct ion?temperature v ce = 800v v ge = +15v r g = 5 ? v ce = 800v t j = 25c , or 125c r g = 5 ? l = 100h 3025 20 15 10 50 7060 50 40 30 20 10 0 10,000 8,0006,000 4,000 2,000 0 18,00016,000 14,000 12,000 10,000 8,0006,000 4,000 2,000 0 200180 160 140 120 100 8060 40 20 0 5045 40 35 30 25 20 15 10 50 25002000 1500 1000 500 0 9,0008,000 7,000 6,000 5,000 4,000 3,000 2,000 1,000 0 v ge = 15v v ce = 800v v ge = +15v r g = 5 ? v ce = 800v v ge = +15v r g = 5 ? 10 15 20 25 30 35 40 45 50 55 10 15 20 25 30 35 40 45 50 55 10 15 20 25 30 35 40 45 50 55 10 15 20 25 30 35 40 45 50 55 10 15 20 25 30 35 40 45 50 55 10 15 20 25 30 35 40 45 50 55 0 10 20 30 40 50 0 25 50 75 100 125 r g = 5 ? , l = 100 h, v ce = 800v t j = 125c t j = 25c t j = 125c t j = 25c r g = 5 ? , l = 100 h, v ce = 800v t j = 25 or 125c,v ge = 15v t j = 125c, v ge = 15v t j = 25c, v ge = 15v e on2, 50a e off, 50a e on2, 25a e off, 25a e on2, 12.5a e off, 12.5a v ce = 800v v ge = +15v t j = 125c e on2, 50a e off, 50a e on2, 25a e off, 25a e on2, 12.5a e off, 12.5a downloaded from: http:///
052-6268 rev d 6-2008 apt25gt120br(g) typical performance curves 0.400.35 0.30 0.25 0.20 0.15 0.10 0.05 0 z jc , thermal impedance (c/w) 0.3 d = 0.9 0.7 single pulse rectangular pulse duration (seconds) figure?19a,?maximum?effective?transient?thermal?impedance,?junction-to-case?vs?pulse?duration 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 3,0001,000 500100 5010 8070 60 50 40 30 20 10 0 c, capacitance ( p f) i c , collector current (a) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure?17,?capacitance??v s collecto r-to-emitter??voltage? figure?18,minimim?switching?safe?operating?area 0 10 20 30 40 50 0 200 400 600 800 1000 1200 1400 figure 19b, transient thermal impedance model 5 10 15 20 25 30 35 40 45 50 f max , operating frequency (khz) i c , collector current (a) figure?20,?operating??frequency??vs?collector??current t j = 125 c t c = 75 c d = 50 %v ce = 800v r g = 5 ? 140 5010 51 0.5 0.1 0.05 f max = min (f max , f max2 ) 0.05 f max1 = t d(on) + t r + t d(off) + t f p diss - p cond e on2 + e off f max2 = p diss = t j - t c r jc c oes c res c ies 0.1780.182 0.0101 0.136 powe r (watts) rc model junction temp. ( c) case temperature. ( c) peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note : downloaded from: http:///
052-6268 rev d 6-2008 apt25gt120br(g) figure?22,?turn-on?switching?waveforms?and?deinitions figure?23,?turn-off?switching?waveforms?and?deinitions t j = 125c collector current collector voltage gate voltage switching energy 5% 10% t d(on) 90% 10% t r 5% t j = 125c collector voltage collector current gate voltage switching energy 0 90% t d(off) 10% t f 90% i c a d.u.t. v ce figure?21,?inductive?switching?test?circui t v cc apt40dq120 to - 247??package??outlin e e1 sac: tin, silver, copper 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 3.50 (.138)3.81 (.150) 2.87 (.113)3.12 (.123) 4.69 ( .185 ) 5.31 (.209)1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) c ollector collecto r emitter gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. downloaded from: http:///
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